Bulletin Autumn‧Winter 1997

Other Menbers of the Research Team • Mr. Qicai Peng and Mr. W.S. Guo, Ph.D. students of Prof. S.P. Wong • Prof. J.B. Xu and Dr. W.Y Cheung, Department of Electronic Engineering, CUHK • Prof. S.K. Hark, Department of Physics, CUHK • Dr. N. Wang and Dr. K.K. Fung, Physics Department, HKUST • Dr. R. Morton and Prof. S.S. Lau, Department of Electrical and Computer Engineering, University of California at San Diego, USA i o n i mp l a n t a t i on is a relativel y n e w t e c h n i q ue t ha t has b e e n u n d e r investigation only during recent years. I on implantation is an indispensable t e c hn i que i n mo d e rn IC i ndu s t r y to i n t r o d u c e i m p u r i t y a t oms i n t o semiconductors to change their electrical conductivity in a controlled manner. It is a technique by wh i ch electrically charged ions are accelerated under the action of an electric field and implanted int o the solid target. The advantages of forming metal silicides by ion implantation include precision i n the number and depth o f the me t a l i o n s i n t r o d u c e d, e x c e l l e n t reproducibility and uniformity, and the possibility of forming particular silicides and silicide structures that are very difficult or i mp o s s i b le to p r o d u ce u s i ng conventional processes. A New Ion Source: MEVVA I n t h e m i d - 8 0 S j B r o w n e t al. 2 i n Lawrence Berkeley Laboratory developed a new type of metal ion source ， namely the metal vapour vacuum arc (MEVVA) ion source. The MEVVA source makes use of the principle of vacuum arc discharge between the cathode and the anode to Fig. 1 The MEVVA implantation system in the Department of Electronic Engineering Metal Silicides by Ion Implantation with a MEVVA Ion Source 33