Bulletin Autumn‧Winter 1997

HlGHLIGHTS OF RGC-FUNDED PROJECTS Metal Silicides by Ion Implantation with a MEVVA Ion Source T he progress in integrated-circuit (IC) technology since the late 1950s has enabled the realization of many brilliant electronic systems. These systems, suc h as computer equipment and peripherals, telecommunication devices, consume r electronics, and industrial electronics, have significantly improved the quality of life. The fact that electronic equipment has increased in functionality and decreased in cost over the years is largely due to the suc ces s f ul m i n i a t u r i z a t i on of semiconductor devices in IC chips. Such miniaturization is in turn dependent on the metallization process i n IC fabrication. Metallization, which is the process to f o rm metal or metal-like layers i n IC structures, provides electrical connection be t ween internal devices as we l l as contacts of the IC to the outside world, and has great impact on IC performance. When the device dimensions go down to Metal suicides by Ion Implantation with a MEV VA Ion Source 31